PE6D0BA

PE6D0BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.5mΩ @VGS = 10V ID 32A PDFN 3X3P 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current4 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 32 20 80 Continuous Drain Current TA = 25 °C TA = 70 °C ID 13 10 Avalanche Current IAS 21 Avalanche Energy L =0.1mH EAS 22 Power Dissipation Power Dissipation3 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C PD 20.8 8.3 3.1 2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2016/12/23 PE6D0BA N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t ≦10s RqJA 40 Junction-to-Ambient2 Steady-State RqJA 68 Junction-to-Case Steady-State RqJ...