Document
P0804BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 8mΩ @VGS = 10V
ID 30A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
TC = 25 °C(Package Limited)
30
Continuous Drain Current
TC = 25 °C(Silicon Limited)
ID
68
Pulsed Drain Current1
TC = 100 °C
43 IDM 150
Continuous Drain Current
TA = 25 °C TA = 70 °C
19 ID 15
Avalanche Current
IAS 51
Avalanche Energy
L = 0.1mH
EAS 130
Power Dissipation
TC = 25 °C TC = 100 °C
62.5 PD 25
Power Dissipation
TA = 25 °C TA = 70 °C
2.5 PD 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Steady-State
Junction-to-Ambient
Steady-State
1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2 50
UNITS °C / W
Ver 1.0
1 .