MOSFET. P1006BK Datasheet

P1006BK MOSFET. Datasheet pdf. Equivalent

Part P1006BK
Description MOSFET
Feature P1006BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P1006BK
P1006BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID
43A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
43
27
120
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
10
8
Avalanche Current
IAS 38
Avalanche Energy
L =0.1mH
EAS
72
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
41
16
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.1
1.4
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
58
Junction-to-Case
RqJC
3
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 35A.
UNITS
°C / W
REV 1.0
1 2014-3-25



P1006BK
P1006BK
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
60
1.3 1.6 2.3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
1
mA
10
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 10A
9.3 13
8.2 10
VDS = 5V, ID = 10A
44 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
VGS =10V
VGS =4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 30V,ID = 10A
VDS = 30V,
ID @ 10A, VGS = 10V, RGEN = 6Ω
1865
215
144
0.8
45.3
24.7
5.3
13.3
32
34
56
36
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
37 A
Forward Voltage1
VSD IF = 10A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / μS
20 nS
10 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 35A.
REV 1.0
2 2014-3-25





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