P3606HK

P3606HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 38mΩ @VGS = 10V ID 15A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 15 ID 10 IDM 40 Continuous Drain Current TA = 25 °C TA = 70 °C 5 ID 4 Avalanche Current IAS 18.6 Avalanche Energy L = 0.1mH EAS 17.3 Power Dissipation TC = 25 °C TC = 100 °C 20.8 PD 8 Power Dissipation TA = 25 °C TA = 70 °C 2.3 PD 1.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 6 Junction-to-Ambient2 RqJA 55 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a sti...