P0903YK

P0903YK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 9mΩ @VGS = 10V 30V 16mΩ @VGS = 10V ID3 CH. 51A Q2 31A Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage Q2 VDS Q1 30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 Q1 ID Q2 Q1 51 31 32 20 Pulsed Drain Current1 Q2 IDM Q1 100 80 Continuous Drain Current TA = 25 °C TA = 70 °C Q2 Q1 ID Q2 Q1 11 8.5 9 6.7 Avalanche Current Q2 IAS Q1 23 17 Avalanche Energy L = 0.1mH Q2 EAS Q1 24 14.5 Power Dissipation TC = 25 °C TC = 100 °C Q2 Q1 PD Q2 Q1 39 27 15 11 REV 1.0 1 UNITS V A mJ W 2017/1/4 P0903YK Dual N-Channel Enhancement Mode MOSFET Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG Q2 2 Q1 1.8 Q2 1.3 Q1 1.1 -55 to 150 W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE...