MOSFET
P1203EK
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = 10V
ID -40...
Description
P1203EK
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = 10V
ID -40A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
TC = 25 °C
-40
Continuous Drain Current
TC = 100 °C TA = 25 °C
ID
-25 -12
Pulsed Drain Current1
TA = 70 °C
IDM
-9.6 -150
Avalanche Current
IAS -48
Avalanche Energy
L = 0.1mH
EAS
117
TC = 25 °C
28
Power Dissipation
TC = 100 °C TA = 25 °C
PD
11 2.6
TA = 70 °C
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.0 1 2014/7/1
P1203EK
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case Junction-to-Ambient2
Steady-State Steady-State
RqJC RqJA
4.4 °C / W
48
1Pulse width limited by maximum junction temperature.
2The value ...
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