P1003EK

P1003EK P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 10.5mΩ @VGS = -10V ID -30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C(Package Limited) Continuous Drain Current TC = 25 °C (Silicon Limited) ID TC = 100 °C Pulsed Drain Current1 IDM Continuous Drain Current TA = 25 °C TA = 70 °C ID Avalanche Current IAS Avalanche Energy L = 0.1mH EAS TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C PD TA = 70 °C Operating Junction & Storage Temperature Range TJ, TSTG LIMITS -30 ±25 -30 -63 -40 -120 -12 -10 -45 102 62.5 25 2.5 1.6 -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/9/22 P1003EK P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA T...