transil array. LESD6V8T1G Datasheet

LESD6V8T1G array. Datasheet pdf. Equivalent

Part LESD6V8T1G
Description Dual transil array
Feature Dual transil array for ESD protection The LESD6V8T1G is a dual monolithic voltage suppressor designe.
Manufacture Leshan Radio Company
Datasheet
Download LESD6V8T1G Datasheet

Dual transil array for ESD protection The LESD6V8T1G is a du LESD6V8T1G Datasheet
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LESD6V8T1G
Dual transil array for ESD protection
The LESD6V8T1G is a dual monolithic voltage
suppressor designed to protect components which
are connected to data and transmission lines against
ESD. It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients. It can also
work as bidirectionnal suppressor by connecting
only pin1 and 2.
Specification Features
Low Leakage < 1 mA @ 5 Volt
Breakdown Voltage: 6.4 – 7.2 Volt @ 5 mA
Low Capacitance (40 pF typical)
ESD Protection Meeting 61000–4–2 Level 4
and 16 kV Human Body Model
We declare that the material of product
compliance with RoHS requirements.
Mechanical Characteristics
Void Free, Transfer–Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Peak Power Dissipation @ 8 x 20 ms
(Note 1)
Steady State Power Dissipation
(Note 2)
Thermal Resistance –
Junction to Ambient
Derate Above 25°C
Maximum Junction Temperature
Operating Junction and Storage
Temperature Range
ESD Discharge
MIL STD 883C – Method 3015–6
IEC61000–4–2, Air Discharge
IEC61000–4–2, Contact Discharge
Lead Solder Temperature
(10 seconds duration)
1. Per Waveform Figure 1
2. Mounted on FR–5 Board = 1.0 X 0.75 X 0.062 in.
LESHAN RADIO COMPANY, LTD.
LESD6V8T1G
SC-89
ORDERING INFORMATION
Device
LESD6V8T1G
Marking
68
Shipping
3000/Tape & Reel
Symbol
Ppk
PD
RqJA
TJmax
TJ, Tstg
VPP
TL
Value
75
385
328
3.0
150
–55 to
+150
16
16
8
260
Unit
Watts
mW
°C/W
mW/°C
°C
°C
kV
°C
1/3



LESD6V8T1G
LESHAN RADIO COMPANY, LTD.
I LESD6V8T1G
IF
VBR VRWM
IIRT VF
V
ELECTRICAL CHARACTERISTICS
Device
LESD6V8T1G
Breakdown Voltage
VBR @ 5 mA (Volts)
Min Nom Max
6.4 6.8 7.2
V–I Curve
Leakage Current
IRM @ VRWM = 5 V
(mA)
1.0
Typical
Capacitance
@ 0 V Bias
(pF)
40
Max
VF @ IF = 10 mA
(V)
1.25
Max
ZZ @
5 mA
(W)
30
Max
ZZK @
0.5 mA
(W)
300
100
tr
90
80
70
60
50
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
40
30 tP
20
10
0
0 20 40 60 80
t, TIME (ms)
Figure 1. 8 × 20 ms Pulse Waveform
1
50
45
40
35
30
25
20
15
10
0
10
1234
BIAS VOLTAGE (VOLTS)
Figure 2. Capacitance
5
0.1
0.01
8 x 20 ms per Figure 1
0.001
0.0001
0.6
0.7 0.8 0.9 1.0 1.1
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Forward Voltage
1.2
1
8 9 10 11 12
VC, CLAMPING VOLTAGE (VOLTS)
Figure 4. Clamping Voltage versus Peak
Pulse Current
2/3





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