MOSFET. PK516BA Datasheet

PK516BA MOSFET. Datasheet pdf. Equivalent

Part PK516BA
Description MOSFET
Feature PK516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ @VGS = 10V I.
Manufacture UNIKC
Datasheet
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PK516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK516BA Datasheet
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PK516BA
PK516BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ @VGS = 10V
ID
51A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
51
ID
32
IDM 120
Continuous Drain Current
TA = 25 °C
TA = 70 °C
14
ID 11
Avalanche Current
IAS 27
Avalanche Energy
L = 0.1mH
EAS 36
Power Dissipation
TC = 25 °C
TC = 100 °C
31
PD 12
Power Dissipation
TA = 25 °C
TA = 70 °C
2.4
PD 1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
4
Junction-to-Ambient2
RqJA
51
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA=25°C
3Package limitation current is 40A.
UNITS
°C / W
Rev 1.0
1 2015/4/13



PK516BA
PK516BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
V
1.5 1.75 2.35
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V ,
VDS = 20V, VGS = 0V , TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
7 9.5
5.5 7
60 S
DYNAMIC
Input Capacitance
Ciss
968
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
162 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
116
1.8 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS=10V
VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 20A,VGS = 10V
VDS = 15V,ID @ 20A, VGS=10V,
RGEN= 6Ω
22
12
nC
2.4
7.1
19
15
nS
35
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
25 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20 A, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
16 nS
6 nC
2Independent of operating temperature.
3Package limitation current is 40A.
Rev 1.0
2 2015/4/13





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