MOSFET. PK5G6EA Datasheet

PK5G6EA MOSFET. Datasheet pdf. Equivalent

Part PK5G6EA
Description MOSFET
Feature PK5G6EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 2.4mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
Download PK5G6EA Datasheet

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PK5G6EA
PK5G6EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 2.4mΩ @VGS = 10V
ID
87A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±12
Continuous Drain Current4
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
87
55
120
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
31
25
Avalanche Current
IAS 51
Avalanche Energy
L = 0.1mH
EAS
130
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4
2.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
30
51
Junction-to-Case
Steady-State
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is 51A.
UNITS
°C / W
REV 1.0
1 2015/10/15



PK5G6EA
PK5G6EA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
20
V
VDS = VGS, ID = 250mA
0.7 0.8 1.3
VDS = 0V, VGS = ±10V
±30 mA
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 55 °C
1
mA
10
VGS = 10V, ID = 15A
1.7 2.4
VGS = 4.5V , ID = 10A
2 2.8
VGS = 2.5V , ID = 10A
2.7 3.9
VDS = 5V, ID = 15A
78 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
VGS =10V
VGS =4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 10V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 10V, VGS = 10V,
ID = 15A
VDS = 10V,
ID @ 15A, VGS = 10V, RGEN = 6Ω
3727
659
541
1.2
88
44
3.6
18
40
58
92
36
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
25 A
Forward Voltage1
VSD IF = 15A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dlF/dt = 100A / mS
33 nS
18 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2015/10/15





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