MOSFET. PK5A7BA Datasheet

PK5A7BA MOSFET. Datasheet pdf. Equivalent

Part PK5A7BA
Description MOSFET
Feature PK5A7BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 3.5.
Manufacture UNIKC
Datasheet
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PK5A7BA P-Channel Logic Level Enhancement Mode MOSFET PRODU PK5A7BA Datasheet
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PK5A7BA
PK5A7BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
3.5mΩ @VGS = -10V
ID
-108A
PDFN 5x6P
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±12
TC = 25 °C
-108
Continuous Drain Current4
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-68
-24
-19
-200
-53
Avalanche Energy
L = 0.1mH
EAS
140
TC = 25 °C
69
Power Dissipation3
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
27
3.5
2.2
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.3
1 2016/7/26



PK5A7BA
PK5A7BA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
35
50
Junction-to-Case
Steady-State
RqJC
1.8
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C.The value in any given application depends on the user's specific board design.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is 50A.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-20
-0.6 -0.7 -1.1
V
VDS = 0V, VGS = ±12V
±100 nA
VDS = -16V, VGS = 0V
VDS = -10V, VGS = 0V , TJ = 125 °C
-1
uA
-10
VGS = -10V, ID = -20A
2.6 3.5
VGS = -4.5V, ID = -20A
3.1 4
VGS = -2.5V, ID = -20A
4.3 5.7
VDS = -5V, ID = -20A
50 S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = -10V,
VGS = -10V , ID = -20A
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -10V,
ID @ -20A, VGS = -10V, RGS = 6Ω
Fall Time2
tf
6383
927
793
3
161
6.3
21
13
12
350
136
pF
Ω
nC
nS
REV1.3
2 2016/7/26





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