PK5B3BA

PK5B3BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 8mΩ @VGS = -10V ID -74A PDFN 5x6P 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -40 VGS ±25 TC = 25 °C -74 Continuous Drain Current4 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -46 -12 -9.6 -100 -49.8 Avalanche Energy L = 0.1mH EAS 124 TC = 25 °C 83 Power Dissipation3 TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 33 2.2 1.4 -55 to 150 UNITS V A mJ W °C REV1.0 1 2016/12/26 PK5B3BA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 35 56 Junction-to-Case Steady-State RqJC 1.5 1Pulse widt...