PK601CA

PK601CA N & P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 28mΩ @VGS = -10V 30V 22mΩ @VGS = 10V ID CH. -22A Q2 23A Q1 PDFN 5*6P 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage Q2 VDS Q1 -30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 -22 Q1 23 ID Q2 -14 Q1 14 Pulsed Drain Current1 Q2 -45 IDM Q1 50 Continuous Drain Current TA = 25 °C TA = 70 °C Q2 -7.8 Q1 8.6 ID Q2 -6.3 Q1 6.9 Avalanche Current Q2 -19 IAS Q1 12 Avalanche Energy L = 0.1mH Q2 EAS Q1 18 7.3 Power Dissipation TC = 25 °C TC = 100 °C Q2 Q1 PD Q2 Q1 25 22 10 9 UNITS V A mJ W REV 1.0 1 2017/1/4 PK601CA N & P-Channel Enhancement Mode MOSFET Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG Q2 3 Q1 3 Q2 2 Q1 2 -55 to 150 W °C THERMAL RESIST...