MOSFET. PK601CA Datasheet

PK601CA MOSFET. Datasheet pdf. Equivalent

Part PK601CA
Description MOSFET
Feature PK601CA N & P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 28mΩ @VGS = -.
Manufacture UNIKC
Datasheet
Download PK601CA Datasheet

PK601CA N & P-Channel Enhancement Mode MOSFET PRODUCT SUMMA PK601CA Datasheet
Recommendation Recommendation Datasheet PK601CA Datasheet





PK601CA
PK601CA
N & P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
-30V
RDS(ON)
28mΩ @VGS = -10V
30V 22mΩ @VGS = 10V
ID CH.
-22A Q2
23A Q1
PDFN 5*6P
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH. LIMITS
Drain-Source Voltage
Q2
VDS
Q1
-30
30
Gate-Source Voltage
Q2
VGS
Q1
±20
±20
Continuous Drain Current3
TC = 25 °C
TC = 100 °C
Q2 -22
Q1 23
ID Q2 -14
Q1 14
Pulsed Drain Current1
Q2 -45
IDM Q1
50
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Q2 -7.8
Q1 8.6
ID Q2 -6.3
Q1 6.9
Avalanche Current
Q2 -19
IAS
Q1
12
Avalanche Energy
L = 0.1mH
Q2
EAS
Q1
18
7.3
Power Dissipation
TC = 25 °C
TC = 100 °C
Q2
Q1
PD Q2
Q1
25
22
10
9
UNITS
V
A
mJ
W
REV 1.0 1 2017/1/4



PK601CA
PK601CA
N & P-Channel Enhancement Mode MOSFET
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
Q2 3
Q1 3
Q2 2
Q1 2
-55 to 150
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL CH. TYPICA MAXIMUM UNITS
Junction-to-Ambient2
t 10s
Steady-State
RqJA
L
Q2
40
57
Junction-to-Ambient2
t 10s
Steady-State
RqJA
Q1
40
65 °C / W
Junction-to-Case
RqJC
Q2
Q1
5
5.5
1Pulse width limited by maximum junction temperature .
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
3Package limitation current :Q1=10A,Q2=-10A
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA Q2 -30
VGS = 0V, ID = 250mA Q1 30
V
VDS = VGS, ID = -250mA Q2 -1 -1.5 -2.5
VDS = VGS, ID = 250mA Q1 1 1.6 2.5
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
Q2
Q1
±100 nA
±100
VDS = -24V, VGS = 0V
Q2
-1
VDS = 24V, VGS = 0V
Q1
1
Zero Gate Voltage Drain Current
IDSS
VDS = -20V
VGS = 0V ,TJ = 55 °C
Q2
-10 mA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VDS = 20V
VGS = 0V ,TJ = 55 °C
VGS = -4.5V, ID = -5A
VGS = 4.5V, ID = 6A
VGS = -10V, ID = -6A
VGS = 10V, ID = 7A
VDS = -5V, ID = -6A
VDS = 5V, ID = 7A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
30 45
18 32
20 28
14 22
18
S
27
REV 1.0 2 2017/1/4





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