MOSFET. PK552DX Datasheet

PK552DX MOSFET. Datasheet pdf. Equivalent

Part PK552DX
Description MOSFET
Feature PK552DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5.7mΩ @VGS =.
Manufacture UNIKC
Datasheet
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PK552DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PK552DX Datasheet
Recommendation Recommendation Datasheet PK552DX Datasheet





PK552DX
PK552DX
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5.7mΩ @VGS = 4.5V
ID
56A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
56
ID 36
IDM 70
Continuous Drain Current
TA = 25 °C
TA = 70 °C
17
ID 14
Avalanche Current
IAS 40
Avalanche Energy
L = 0.1mH
EAS 79
Power Dissipation
TC = 25 °C
TC = 100 °C
31
PD 12.5
Power Dissipation
TA = 25 °C
TA = 70 °C
2.9
PD 1.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
4
Junction-to-Ambient2
RqJA
43
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 22A.
UNITS
°C / W
REV 1.0
1 2014/7/10



PK552DX
PK552DX
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
20
0.3 0.7 1
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V ,
VDS = 10V, VGS = 0V , TJ = 70 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 17A
VGS = 2.5V, ID = 17A
VDS = 5V, ID = 17A
4.4 5.7
4.9 6.2
100 S
DYNAMIC
Input Capacitance
Ciss
4120
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
481 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg VGS = 0V, VDS = 0V, f = 1MHz
409
1Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS=2.5V
VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10V, ID = 17A
VDS = 10V, ID @ 17A,
VGS= 4.5V, RGEN= 6Ω
28.8
48.2
6
nC
14
20
25
nS
180
85
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 17A, VGS = 0V
24 A
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 17A, dlF/dt = 100A /μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
25 nS
14 nC
2Independent of operating temperature.
3Package limitation current is 22A.
REV 1.0
2 2014/7/10





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