MOSFET. PK600BA Datasheet

PK600BA MOSFET. Datasheet pdf. Equivalent

Part PK600BA
Description MOSFET
Feature PK600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.5mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
Download PK600BA Datasheet

PK600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK600BA Datasheet
Recommendation Recommendation Datasheet PK600BA Datasheet





PK600BA
PK600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID
40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
40
25
100
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
10.7
8.6
Avalanche Current
IAS 18
Avalanche Energy
L =0.1mH
EAS
16.2
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
27.8
11
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
63
Junction-to-Case
RqJC
4.5
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 20A.
UNITS
°C / W
REV 1.1 1 2015/7/2



PK600BA
PK600BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 9A
VGS = 10V , ID = 9.5A
VDS = 5V, ID = 9.5A
30
1.3 1.75 2.3
V
±100 nA
1
mA
10
9.7 13.5
7.4 9.5
62 S
DYNAMIC
Input Capacitance
Ciss
608
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
112
Reverse Transfer Capacitance
Crss
74
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.8
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 15V,
VGS = 10V, ID = 9.5A
14
7.3
2
Gate-Drain Charge2
Qgd
3.7
Turn-On Delay Time2
td(on)
13
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 9.5A, VGS = 10V, RGEN = 6Ω
37
48
Fall Time2
tf
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 9.5A, VGS = 0V
25
1.1
pF
Ω
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 9.5A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 20A.
11.7 nS
3 nC
REV 1.1 2 2015/7/2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)