PK608BA

PK608BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 3.5mΩ @VGS = 10V ID 87A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 87 55 150 Continuous Drain Current TA = 25 °C TA= 70 °C ID 20 15.6 Avalanche Current IAS 49 Avalanche Energy L =0.1mH EAS 120 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Power Dissipation TA = 25 °C TA = 70 °C PD 2.4 1.5 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RqJA 50.2 Junction-to-Case RqJC 2.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 51A. 3The value of RθJA is measured with the device mounted o...