MOSFET. PK608BA Datasheet

PK608BA MOSFET. Datasheet pdf. Equivalent

Part PK608BA
Description MOSFET
Feature PK608BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 3.5mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PK608BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK608BA Datasheet
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PK608BA
PK608BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 3.5mΩ @VGS = 10V
ID
87A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
87
55
150
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
20
15.6
Avalanche Current
IAS 49
Avalanche Energy
L =0.1mH
EAS
120
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
50.2
Junction-to-Case
RqJC
2.5
1Pulse width limited by maximum junction temperature.
2Package limitation current is 51A.
3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.1
1 2016/7/14



PK608BA
PK608BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 15A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
40
1.3 1.75 2.3
V
±100 nA
1
mA
10
3 4.6
2.6 3.5
136 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
VGS =10V
VGS =4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 20V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 20V,
VGS = 10V, ID = 20A
VDS = 20V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
3884
441
329
1.1
77
40
11
19
25
18
65
18
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
38 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
25 nS
19 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.1
2 2016/7/14





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