PK610SA

PK610SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 2.8mΩ @VGS = 10V ID 83A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 83 52 150 Continuous Drain Current TA = 25 °C TA= 70 °C ID 22 18 Avalanche Current IAS 37 Avalanche Energy L =0.1mH EAS 68.5 Power Dissipation TC = 25 °C TC = 100 °C PD 34 13 Power Dissipation TA = 25 °C TA = 70 °C PD 2.3 1.5 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RqJA 53 Junction-to-Case RqJC 3.6 1Pulse width limited by maximum junction temperature. 2Package limitation current is 45A 3The value of RqJA is measured with the device mounted on 1in2 ...