MOSFET. PK630HY Datasheet

PK630HY MOSFET. Datasheet pdf. Equivalent

Part PK630HY
Description MOSFET
Feature PK630HY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 4.9mΩ @VGS = .
Manufacture UNIKC
Datasheet
Download PK630HY Datasheet

PK630HY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PK630HY Datasheet
Recommendation Recommendation Datasheet PK630HY Datasheet





PK630HY
PK630HY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
4.9mΩ @VGS = 10V
30V 7.8mΩ @VGS = 10V
ID CH.
64A Q2
40A Q1
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH.
LIMITS
Drain-Source Voltage
Q2
VDS
Q1
30
30
Gate-Source Voltage
Q2
VGS
Q1
±20
±20
Continuous Drain Current3
TC = 25 °C
TC = 100 °C
Q2
Q1
ID
Q2
Q1
64
40
40
25
Pulsed Drain Current1
Q2
IDM Q1
150
90
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Q2
Q1
ID
Q2
Q1
21
14
17
11
Avalanche Current
Q2
IAS
Q1
35
21
Avalanche Energy
L = 0.1mH
Q2
EAS
Q1
61
22
Power Dissipation
TC = 25 °C
TC = 100 °C
Q2
Q1
PD Q2
Q1
37
24
15
9.6
REV 1.0
1
UNITS
V
A
mJ
W
2017/1/3



PK630HY
PK630HY
Dual N-Channel Enhancement Mode MOSFET
Power Dissipation4
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
Q2 4
Q1 3.1
Q2 2.6
Q1 2
-55 to 150
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient2
t 10s
Steady-State
SYMBOL
RqJA
RqJA
CH. TYPICA
Q2 L
Q1
Q2
Q1
MAXIMUM
30
40
56
72
UNITS
°C / W
Junction-to-Case
RqJC
Q2
Q1
3.3
5.2
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
3Package limitation current :Q1=25A,Q2=25A.
4The Power dissipation is based on RqJA t 10s value.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH.
MIN TYP
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
VGS = 0V, ID = 1mA
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
Q2
Q1
Q2
Q1
30
30
1.3
1.27
1.6
1.36
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
Q2
Q1
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V,
VGS = 0V , TJ = 55 °C
Q2
Q1
Q2
Q1
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 16A
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 20A
VGS = 10V, ID = 11A
VDS = 5V, ID = 20A
VDS = 5V, ID = 11A
Q2
Q1
Q2
Q1
Q2
Q1
3.4
6.8
2.7
5.3
70
66
UNITS
MAX
2.3
2.3
±100
±100
0.5
1
5
10
5.1
11
4.9
7.8
V
nA
mA
mA
mA
mA
S
REV 1.0 2 2017/1/3





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