MOSFET. PK648BA Datasheet

PK648BA MOSFET. Datasheet pdf. Equivalent

Part PK648BA
Description MOSFET
Feature PK648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.4mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PK648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK648BA Datasheet
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PK648BA
PK648BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.4mΩ @VGS = 10V
ID
75A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
47
150
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
19.8
15.8
Avalanche Current
IAS 37
Avalanche Energy
L =0.1mH
EAS
71
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
35
14
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
Junction-to-Case
RqJC
3.6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 26A.
UNITS
°C / W
REV 1.0
1 2016/11/4



PK648BA
PK648BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 15A
VGS = 10V , ID = 18A
VDS = 5V, ID = 18A
30
1.35
1.75
3.3
2.6
60
2.35
±100
1
10
5.2
3.4
V
nA
mA
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
2071
329
225
1.9
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS =10V
VGS =4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 18A
VDS = 15V,
ID @ 18A, VGS = 10V, RGEN = 6Ω
40.9
21.2
6.3
9.6
26
12
50
10
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
35 A
Forward Voltage1
VSD IF = 18A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 18A, dlF/dt = 100A / mS
25 nS
12 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 26A.
REV 1.0
2 2016/11/4





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