MOSFET. PK650BA Datasheet

PK650BA MOSFET. Datasheet pdf. Equivalent

Part PK650BA
Description MOSFET
Feature PK650BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.3mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
Download PK650BA Datasheet

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PK650BA
PK650BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.3mΩ @VGS = 10V
ID
70A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
70
44.6
100
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
19
15
Avalanche Current
IAS 37
Avalanche Energy
L =0.1mH
EAS
68
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
52
Junction-to-Case
RqJC
4
1Pulse width limited by maximum junction temperature.
2Package limitation current is 35A.
3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.1
1 2015/7/20



PK650BA
PK650BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
30
V
VDS = VGS, ID = 250mA
1.3 1.7 2.3
VDS = 0V, VGS = ±20V
±100 nA
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
1
mA
10
VGS = 4.5V, ID = 15A
VGS = 10V , ID = 19A
3.6 4.4
2.7 3.3
VDS = 5V, ID = 19A
60 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1741
311
198
1.23
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 15V,
VGS = 10V, ID = 19A
35
19
5
Gate-Drain Charge2
Qgd
9
Turn-On Delay Time2
td(on)
23
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 19A, VGS = 10V, RGEN = 6Ω
10
40
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 19A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 19A, dlF/dt = 100A / μS
20.4
8.1
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
25.8
1.2
nC
nS
A
V
nS
nC
REV 1.1
2 2015/7/20





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