PK650DY

PK650DY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 2.8mΩ @VGS = 10V 30V 11mΩ @VGS = 10V ID CH. 83A Q2 36A Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage Q2 VDS Q1 30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 Q1 ID Q2 Q1 83 36 52 23 Pulsed Drain Current1 Q2 IDM Q1 130 55 Continuous Drain Current TA = 25 °C TA = 70 °C Q2 Q1 ID Q2 Q1 21 10 17 8 Avalanche Current Q2 IAS Q1 52 21 Avalanche Energy L = 0.1mH Q2 EAS Q1 135 22 Power Dissipation TC = 25 °C TC = 100 °C Q2 Q1 PD Q2 Q1 36 28 14 11 REV 1.0 1 UNITS V A mJ W 2017/1/5 PK650DY Dual N-Channel Enhancement Mode MOSFET Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG Q2 2.4 Q1 2 Q2 1.5 Q1 1.3 -55 to 150 W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE J...