MOSFET. PK664BA Datasheet

PK664BA MOSFET. Datasheet pdf. Equivalent

Part PK664BA
Description MOSFET
Feature PK664BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 2.4mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PK664BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK664BA Datasheet
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PK664BA
PK664BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.4mΩ @VGS = 10V
ID
114A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
114
72
250
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
23
18
Avalanche Current
IAS 48
Avalanche Energy
L =0.1mH
EAS
115
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
59
23
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
51
Junction-to-Case
RqJC
2.1
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 51A.
UNITS
°C / W
REV 1.1
1 2016/6/23



PK664BA
PK664BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 20A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
30
1.3 1.75 2.3
V
±100 nA
1
mA
10
2.2 3.0
1.7 2.4
62 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
2809
490
324
1
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 15V,
VGS = 10V, ID = 20A
57.3
29.3
9
Gate-Drain Charge2
Qgd
14
Turn-On Delay Time2
td(on)
26
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
15
56
Fall Time2
tf
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
40
40
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 51A.
59
1
nC
nS
A
V
nS
nC
REV 1.1
2 2016/6/23





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