MOSFET. PK696BA Datasheet

PK696BA MOSFET. Datasheet pdf. Equivalent

Part PK696BA
Description MOSFET
Feature PK696BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V I.
Manufacture UNIKC
Datasheet
Download PK696BA Datasheet

PK696BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK696BA Datasheet
Recommendation Recommendation Datasheet PK696BA Datasheet





PK696BA
PK696BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
53A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
53
34
150
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
14
11
Avalanche Current
IAS 29
Avalanche Energy
L =0.1mH
EAS
42
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.2
1.4
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
56
Junction-to-Case
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 20A.
UNITS
°C / W
REV 1.0
1 2014-2-20



PK696BA
PK696BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 14A
VGS = 10V , ID = 14A
VDS = 5V, ID = 14A
30
1.3 1.75 2.3
V
±100 nA
1
mA
10
5.2 8.5
46
62 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
VGS =10V
VGS =4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 15V,
VGS = 10V, ID = 14A
VDS = 15V,
ID @ 14A, VGS = 10V, RGEN = 6Ω
1228
212
154
1.6
28
15
3.1
8.2
18
10
39
11
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
25 A
Forward Voltage1
VSD IF = 14A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 14A, dlF/dt = 100A / μS
26 nS
13 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 20A.
REV 1.0
2 2014-2-20





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)