MOSFET. PK6A6BA Datasheet

PK6A6BA MOSFET. Datasheet pdf. Equivalent

Part PK6A6BA
Description MOSFET
Feature PK6A6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 8mΩ @VGS = 10V I.
Manufacture UNIKC
Datasheet
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PK6A6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PK6A6BA Datasheet
Recommendation Recommendation Datasheet PK6A6BA Datasheet





PK6A6BA
PK6A6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 8mΩ @VGS = 10V
ID
42A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
42
26.6
100
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
11
9
Avalanche Current
IAS 33.7
Avalanche Energy
L =0.1mH
EAS
56.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.3
1.5
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
54
Junction-to-Case
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0 1 2015/1/6



PK6A6BA
PK6A6BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
40
V
VDS = VGS, ID = 250mA
1.3 1.8 2.3
VDS = 0V, VGS = ±20V
±100 nA
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55 °C
1
mA
10
VGS = 4.5V, ID = 11A
VGS = 10V , ID = 11A
6.4 12
5.5 8
VDS = 5V, ID = 11A
55 S
DYNAMIC
Input Capacitance
Ciss
1672
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
206
Reverse Transfer Capacitance
Crss
124
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 15V,
VGS = 10V, ID = 11A
34
18
5.1
Gate-Drain Charge2
Qgd
8.3
Turn-On Delay Time2
td(on)
25
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 11A, VGS = 10V, RGEN = 6Ω
11
41
Fall Time2
tf
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 11A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 11A, dlF/dt = 100A / mS
19.5
9.4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
24
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0 2 2015/1/6





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