PK6H6BA

PK6H6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.8mΩ @VGS = 10V ID 46A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM ID 46 29 100 A 16 13 Avalanche Current IAS 22 Avalanche Energy L =0.1mH EAS 24 mJ Power Dissipation TC = 25 °C TC = 100 °C PD 31 12.5 W Power Dissipation3 TA = 25 °C TA = 70 °C PD 4 W 2.6 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 30 60 Junction-to-Case Steady-State RqJC 4 1Pulse width limited by maximum junction temperature. 2T...