PKCH2BB

PKCH2BB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 0.99mΩ @VGS = 10V ID4 229A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM ID 228 145 350 A 50 40 Avalanche Current IAS 86 Avalanche Energy L =0.1mH EAS 369.8 mJ Power Dissipation TC = 25 °C TC = 100 °C PD 104 W 41 Power Dissipation3 TA = 25 °C TA = 70 °C PD 5 W 3.2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 25 40 Junction-to-Case Steady-State RqJC 1.2 1Pulse width limited by maximum junction temper...