MOSFET. PKCH2BB Datasheet

PKCH2BB MOSFET. Datasheet pdf. Equivalent

Part PKCH2BB
Description MOSFET
Feature PKCH2BB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 0.99mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
Download PKCH2BB Datasheet

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PKCH2BB
PKCH2BB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 0.99mΩ @VGS = 10V
ID4
229A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current4
Pulsed Drain Current1
Continuous Drain Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
ID
228
145
350
A
50
40
Avalanche Current
IAS 86
Avalanche Energy
L =0.1mH
EAS
369.8
mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
104
W
41
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
5
W
3.2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
25
40
Junction-to-Case
Steady-State
RqJC
1.2
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value
4The maximum current rating is package limited.
UNITS
°C / W
REV 1.0
1 2016/10/9



PKCH2BB
PKCH2BB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 20A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
30
1.35
1.8
1.2
0.85
123
2.35
±100
1
10
1.5
0.99
V
nA
mA
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
6151
1058
693
1.7
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS =10V
VGS =4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V,
VGS = 10V, ID = 20A
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
128
65
19.7
24
27
49
171
90
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
104 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
46 nS
36 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2016/10/9





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