PZ1003EK

PZ1003EK P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 10mΩ @VGS = -10V ID -50A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current2,4 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C -50 ID -40 IDM -100 Continuous Drain Current TA = 25 °C TA = 70 °C -12 ID -9 Avalanche Current IAS -45 Avalanche Energy L = 0.1mH EAS 102 TC = 25 °C 41 Power Dissipation TC = 100 °C TA = 25 °C 26 PD 2.5 TA = 70 °C 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/7/14 PZ1003EK P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Junction-to-Ambient3 1Pulse width limited by maximum junction temperature. RqJC RqJA 3 °C / W 50 2Limited only by maximum temperatur...