MOSFET. PZ1003EK Datasheet

PZ1003EK MOSFET. Datasheet pdf. Equivalent

Part PZ1003EK
Description MOSFET
Feature PZ1003EK P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 10mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
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PZ1003EK P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PZ1003EK Datasheet
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PZ1003EK
PZ1003EK
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
10mΩ @VGS = -10V
ID
-50A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current2,4
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
-50
ID
-40
IDM -100
Continuous Drain Current
TA = 25 °C
TA = 70 °C
-12
ID -9
Avalanche Current
IAS -45
Avalanche Energy
L = 0.1mH
EAS 102
TC = 25 °C
41
Power Dissipation
TC = 100 °C
TA = 25 °C
26
PD
2.5
TA = 70 °C
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/7/14



PZ1003EK
PZ1003EK
P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case
Junction-to-Ambient3
1Pulse width limited by maximum junction temperature.
RqJC
RqJA
3
°C / W
50
2Limited only by maximum temperature allowed.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
4Package limitation current is 40A.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -9A
VGS = -10V, ID = -12A
VDS = -10V, ID = -12A
-30
-1
-100
-1.6
12.3
9
38
-3
±30
-1
-10
21
10
V
mA
mA
A
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V,VGS = -10V,
ID = -12A
VDS = -15V, ID @ -12A,
VGS = -10V, RGEN = 6Ω
2400
415
405
3.3
57
6.3
14.3
15
17
98
45
pF
Ω
nC
nS
REV 1.0
2 2014/7/14





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