Document
PKC46DY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 1.9mΩ @VGS = 10V
30V 9.5mΩ @VGS = 10V
ID CH. 99A Q2 34A Q1
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH.
LIMITS
Drain-Source Voltage
Q2 VDS
Q1
30 30
Gate-Source Voltage
Q2 VGS
Q1
±20 ±20
Continuous Drain Current3
TC = 25 °C TC = 100 °C
Q2 Q1 ID Q2 Q1
99 34 63 21
Pulsed Drain Current1
Q2 IDM Q1
150 70
Continuous Drain Current
TA = 25 °C TA = 70 °C
Q2 Q1 ID Q2 Q1
25 9.2 20 7.3
Avalanche Current
Q2 IAS
Q1
52 22
Avalanche Energy
L = 0.1mH
Q2 EAS
Q1
135 24
Power Dissipation
TC = 25 °C TC = 100 °C
Q2 Q1 PD Q2 Q1
36 24 14.7 9.6
REV 1.0
1
UNITS V
A
mJ W 2017/1/3
PKC46DY
Dual N-Channel Enhancement Mode MOSFET
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
Q2 2.4 Q1 1.7 Q2 1.5 Q1 1.1
-55 to 150
W °C
THERMAL RESISTANCE RATINGS
THERMAL RES.