MOSFET. P0165AI Datasheet

P0165AI Datasheet PDF


Part

P0165AI

Description

N-Channel Enhancement Mode MOSFET

Manufacture

UNIKC

Page 5 Pages
Datasheet
Download P0165AI Datasheet


P0165AI Datasheet
P0165AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
14Ω @VGS = 10V
ID
1A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
IAS
EAS
1
0.6
3
1.1
5.8
Power DissipationA
TC = 25 °C
TC = 100 °C
PD
27.6
11
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , Starting TJ = 25 °C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.53
110
UNITS
°C / W
Ver 1.0
1 2012/4/16

P0165AI Datasheet
P0165AI
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 650V, VGS = 0V , TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 0.5A
650
2.5
3.6 4.5
±250
1
10
9.7 14
Forward Transconductance1
gfs
VDS = 10V, ID = 0.5A
1
DYNAMIC
Input Capacitance
Ciss
168
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
58
Reverse Transfer Capacitance
Crss
3
Total Gate Charge2
Qg
5
Gate-Source Charge2
Qgs VDD = 480V, ID = 1A, VGS = 10V
3.5
Gate-Drain Charge2
Qgd
0.7
Turn-On Delay Time2
td(on)
12
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V, ID = 1A, RG= 25Ω
40
20
Fall Time2
tf
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 1A, dlF/dt = 100A / mS VGS = 0V
160
0.45
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
1
1.4
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16


Features Datasheet pdf P0165AI N-Channel Enhancement Mode MOSFE T PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 14Ω @VGS = 10V ID 1A TO-251 A BSOLUTE MAXIMUM RATINGS (TA = 25 °C Un less Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Sourc e Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 P ulsed Drain Current1, 2 Avalanche Curre nt3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 1 0. 6 3 1.1 5.8 Power DissipationA TC = 2 5 °C TC = 100 °C PD 27.6 11 Operat ing Junction & Storage Temperature Rang e TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMA L RESISTANCE Junction-to-Case Junction- to-Ambient 1Pulse width limited by maxi mum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , Starting TJ = 25 °C SYMBOL RqJ C RqJA TYPICAL MAXIMUM 4.53 110 UNIT S °C / W Ver 1.0 1 2012/4/16 P0165A I N-Channel Enhancement Mode MOSFET PA RAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC D.
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