MOSFET. PJ015BL Datasheet

PJ015BL MOSFET. Datasheet pdf. Equivalent

Part PJ015BL
Description MOSFET
Feature PJ015BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 1Ω @VGS = 10V .
Manufacture UNIKC
Datasheet
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PJ015BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PJ015BL Datasheet
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PJ015BL
PJ015BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
1Ω @VGS = 10V
ID
0.8A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
0.8
0.6
4
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.5
1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
80
Junction-to-Case
RqJC
40
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0 1 2016/9/2



PJ015BL
PJ015BL
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
150
1 1.8
3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 0.5A
VGS = 10V, ID = 0.5A
VDS = 5V, ID = 0.5A
0.75 1.1
0.67 1
1.5
Ω
S
DYNAMIC
Input Capacitance
Ciss
200
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
27 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 75V,
VGS = 10V, ID = 0.5A
VDS = 75V, ID @ 0.5A
VGS = 10V, RGS = 25Ω
12
6.8
1.2 nC
3.1
15
13
nS
104
50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 0.5A, VGS = 0V
0.8 A
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 0.5A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
36 nS
39 nC
2Independent of operating temperature.
REV 1.0 2 2016/9/2





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