PA110BLA

PA110BLA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 6 Continuous Drain Current TA = 25 °C ID 3.2 Pulsed Drain Current1 TA = 100 °C IDM 2 15 Avalanche Current IAS 6.6 Avalanche Energy L = 0.1mH EAS 2.2 Power Dissipation TA = 25 °C TA = 100 °C PD 2.5 1 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 50 Junction-to-Case RqJC 14 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2015/12/4 PA110BLA N-Channel Enhancement Mode MOSFET ELECTRICA...