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P0550EI Dataheets PDF



Part Number P0550EI
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P0550EI DatasheetP0550EI Datasheet (PDF)

P0550EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.55Ω @VGS = 10V ID 5A TO-251 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS 500 VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 5 3.2 20 2.5 31.2 Power Dissipation TC = 25 °C TC = 100 °C Operating .

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P0550EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.55Ω @VGS = 10V ID 5A TO-251 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS 500 VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 5 3.2 20 2.5 31.2 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 62.5 25 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH, starting TJ = 25˚C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2 62.5 UNITS °C / W REV 1.0 1 2015/7/14 P0550EI N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Other.


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