P2804BI

P2804BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 33A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy TC = 25 °C TC = 100 °C L = 0.1mH ID IDM IAS EAS 33 20 120 22 26 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 48 19 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.6 62.5 UNITS °C / W REV 1.1 1 2014/7/28 P2804BI N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS Gate Thre...