P1006BIS

P1006BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 66A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 66 42 150 Avalanche Current IAS 38.5 Avalanche Energy L = 0.1mH EAS 74 Power Dissipation TC= 25 °C TC= 100°C PD 96 38 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.3 62.5 UNITS °C / W REV 1.0 1 2015/8/12 P1006BIS N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MI...