MOSFET. P2504EI Datasheet

P2504EI MOSFET. Datasheet pdf. Equivalent

Part P2504EI
Description MOSFET
Feature P2504EI P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 25..
Manufacture UNIKC
Datasheet
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P2504EI P-Channel Logic Level Enhancement Mode MOSFET PRODU P2504EI Datasheet
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P2504EI
P2504EI
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
25.8mΩ @VGS = -10V
ID
-30A
TO-251
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
ID
IDM
-30
-24
-65
Power Dissipation
TC = 25 °C
TC = 70 °C
PD
42
27
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
REV 1.0
1 2014/8/14



P2504EI
P2504EI
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-40
-1.2 -2.2 -3
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-65
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -7V, ID = -10A
VGS = -10V, ID = -18A
VDS = -5V, ID = -18A
30 40
22 25.8
20
DYNAMIC
Input Capacitance
Ciss
1570
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
320
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -18A
VDS = -20V,RL = 1Ω,
ID @ -1A,VGS = -10V, RGS = 6Ω
210
29
6
7
12
29
42
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = IS, VGS = 0V
-18
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -18A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
29
21
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014/8/14





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