MOSFET. P0770EIS Datasheet

P0770EIS MOSFET. Datasheet pdf. Equivalent

Part P0770EIS
Description MOSFET
Feature P0770EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 1.5Ω @VGS = 10.
Manufacture UNIKC
Datasheet
Download P0770EIS Datasheet

P0770EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P0770EIS Datasheet
Recommendation Recommendation Datasheet P0770EIS Datasheet





P0770EIS
P0770EIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
1.5Ω @VGS = 10V
ID
7A
TO-251(IS)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
7
4.4
20
2.2
Avalanche Energy3
EAS 24
Power Dissipation
TC= 25 °C
TC= 100°C
PD
96
38
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.3
62.5
UNITS
°C / W
REV 1.0
1 2015/10/19



P0770EIS
P0770EIS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 700V, VGS = 0V , TC = 25 °C
VDS = 560V, VGS = 0V , TC = 100 °C
700
2
VGS = 10V, ID = 3.5A
VDS =10V, ID = 3.5A
2.9 4
V
±100 nA
1
mA
10
1.2 1.5
10 S
DYNAMIC
Input Capacitance
Ciss
1223
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
106
Reverse Transfer Capacitance
Crss
9
Total Gate Charge2
Qg
28
Gate-Source Charge2
Qgs VDD = 560V, ID = 7A, VGS = 10V
5
Gate-Drain Charge2
Qgd
10
Turn-On Delay Time2
td(on)
35
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VGS = 10V , VDD = 350V,
ID = 7A, RG= 25Ω
75
80
Fall Time2
tf
57
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 7A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7A, dlF/dt = 100A / mS
400
4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
7
1
pF
nC
nS
A
V
nS
uC
REV 1.0
2 2015/10/19





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