MOSFET. PI632BZ Datasheet

PI632BZ MOSFET. Datasheet pdf. Equivalent

Part PI632BZ
Description MOSFET
Feature PI632BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.7mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PI632BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PI632BZ Datasheet
Recommendation Recommendation Datasheet PI632BZ Datasheet





PI632BZ
PI632BZ
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.7mΩ @VGS = 10V
ID
105A
TO-251(IS)
1.GATE
2.DRAIN
3.SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
105
66
200
Avalanche Current
IAS 40.8
Avalanche Energy
L = 0.1mH
EAS
83
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
74
29
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 40A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.7
62.5
UNITS
°C / W
REV 1.0
1 2014/8/25



PI632BZ
PI632BZ
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.3 1.7 2.3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 20A
3.9 4.8
3.1 3.7
Forward Transconductance1
gfs
VDS = 5V, ID = 20A
80
DYNAMIC
Input Capacitance
Ciss
2140
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
404
Reverse Transfer Capacitance
Crss
237
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.6
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 20A
VDS = 15V, ID @ 20A,
VGS = 10V, RGEN =6Ω
43
22.4
6.2
13
25
15
54
17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
105
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
22
10
2Independent of operating temperature.
3Package limitation current is 40A.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/8/25





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