P0165ED

P0165ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 10.6Ω @VGS = 10V ID 1A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1，2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 1 0.7 3 0.5 Avalanche Energy3 EAS 1.25 Power Dissipation TC = 25 °C TC = 100 °C PD 37 15 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25˚C. SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 3.3 UNITS °C / W REV 1.0 1 2016/1/14 P0165ED N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Not...