MOSFET. P0303BD Datasheet

P0303BD Datasheet PDF


Part

P0303BD

Description

N-Channel Enhancement Mode MOSFET

Manufacture

UNIKC

Page 5 Pages
Datasheet
Download P0303BD Datasheet


P0303BD Datasheet
P0303BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.7mΩ @VGS = 10V
ID2
87A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
87
55
300
Avalanche Current
IAS 80
Avalanche Energy
L=0.1mH
EAS
320
Power Dissipation
TC= 25 °C
TC= 100°C
PD
48
19
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 80A.
SYMBOL
RqJC
RqJA
TYPICA
L
MAXIMUM
2.6
62.5
UNITS
°C / W
REV 1.0
1 2014/4/29

P0303BD Datasheet
P0303BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
30
1
1.6 3
V
±250 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =16A
VGS =10V, ID =20A
3.5 4.6
2.6 3.7
Forward Transconductance1
gfs
VDS =5V, ID =20A
64 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
4470
766
655
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS = 10V
VGS = 4.5V
Qgs
VDS = 15V,
ID = 20A
Qgd
td(on)
tr
td(off)
VDD = 15V ,
ID20A, VGS = 10V, RGEN =6Ω
tf
107
53.1
15
26
22
89
73
24
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
87 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
VGS = 0V, dlS/dt = 100A / ms
38 nS
28 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 80A.
REV 1.0
2 2014/4/29


Features Datasheet pdf P0303BD N-Channel Enhancement Mode MOSFE T PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.7mΩ @VGS = 10V ID2 87A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TES T CONDITIONS SYMBOL LIMITS Drain-Sou rce Voltage VDS 30 Gate-Source Voltag e VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 1 00 °C ID IDM 87 55 300 Avalanche Cu rrent IAS 80 Avalanche Energy L=0.1m H EAS 320 Power Dissipation TC= 25 °C TC= 100°C PD 48 19 Operating Ju nction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESI STANCE Junction-to-Case Junction-to-Amb ient 1Pulse width limited by maximum ju nction temperature. 2Package limitation current is 80A. SYMBOL RqJC RqJA TYP ICA L MAXIMUM 2.6 62.5 UNITS °C / W REV 1.0 1 2014/4/29 P0303BD N-Channe l Enhancement Mode MOSFET ELECTRICAL C HARACTERISTICS (TJ = 25 °C, Unless Oth erwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS.
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