P0550BD

P0550BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 1.75Ω @VGS = 10V ID 4.5A TO-252 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM EAS 4.5 3 15 31 Power Dissipation TC = 25 °C TC = 100 °C PD 52 20 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V, L = 10mH, starting TJ = 25°C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.4 62.5 UNITS °C / W Ver 1.1 1 2013-3-14 P0550BD N-Channel Enhancement Mode MOSFET PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Sou...