3 SDRAM. EM47EM1688SBB Datasheet

EM47EM1688SBB SDRAM. Datasheet pdf. Equivalent

Part EM47EM1688SBB
Description 4Gb Double DATA RATE 3 SDRAM
Feature Revision History Revision 0.1 (Mar. 2012) -First release. Revision 0.2 (Oct. 2013) -Add package size.
Manufacture Eorex
Datasheet
Download EM47EM1688SBB Datasheet

Revision History Revision 0.1 (Mar. 2012) -First release. Re EM47EM1688SBB Datasheet
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EM47EM1688SBB
Revision History
Revision 0.1 (Mar. 2012)
-First release.
Revision 0.2 (Oct. 2013)
-Add package size.
EM47EM1688SBB
Oct. 2013
1/39
www.eorex.com



EM47EM1688SBB
EM47EM1688SBB
4Gb (32M×8Bank×16) Double DATA RATE 3 SDRAM
Features
JEDEC Standard VDD/VDDQ = 1.5V±0.075V.
All inputs and outputs are compatible with SSTL_15
interface.
Fully differential clock inputs (CK, /CK) operation.
Eight Banks
Posted CAS by programmable additive latency
Bust length: 4 with Burst Chop (BC) and 8.
CAS Write Latency (CWL): 5,6,7,8
CAS Latency (CL): 6,7,8,9,10,11
Write Latency (WL) =Read Latency (RL) -1.
Bi-directional Differential Data Strobe (DQS).
Data inputs on DQS centers when write.
Data outputs on DQS, /DQS edges when read.
On chip DLL align DQ, DQS and /DQS transition
with CK transition.
DM mask write data-in at the both rising and falling
edges of the data strobe.
Sequential & Interleaved Burst type available both
for 8 & 4 with BC.
Multi Purpose Register (MPR) for pre-defined
pattern read out
On Die Termination (ODT) options: Synchronous
ODT, Dynamic ODT, and Asynchronous ODT
Auto Refresh and Self Refresh
8,192 Refresh Cycles / 64ms
RoHS Compliance
Driver Strength:RZQ/7, RZQ/6 (RZQ=240Ω)
High Temperature Self-Refresh rate enable
ZQ calibration for DQ drive and ODT
RESET pin for initialization and reset function
Description
The EM47EM1688SBB is a high speed Double Date
Rate 3 (DDR3) Synchronous DRAM fabricated with
ultra high performance CMOS process containing 4G
bits which organized as 32Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed
double-data-rate transfer rates of up to 1600
Mb/sec/pin (DDR3-1600) for general applications.
The chip is designed to comply with the following key
DDR3 SDRAM features: (1) posted CAS with
additive latency, (2) write latency = read latency -1,
(3) On Die Termination (4) programmable driver
strength data,(5) seamless BL4 access. All of the
control and address inputs are synchronized with a
pair of externally supplied differential clocks. Inputs
are latched at the cross point of differential clocks
(CK rising and /CK falling). All I/Os are synchronized
with a pair of bidirectional differential data strobes
(DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and
bank address information in a /RAS and /CAS
multiplexing style. The 4Gb DDR3 devices operates
with a single power supply: 1.5V ± 0.075V VDD and
VDDQ. Available package: FBGA-96Ball (with 0.8mm
x 0.8mm ball pitch)
Oct. 2013
2/39
www.eorex.com





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