EM47FM0888SBA

EM47FM0888SBA 4Gb (64M× 8Bank×8) Double DATA RATE 3 low voltage SDRAM Features JEDEC Standard VDD/VDDQ = 1.5V±0.075V All inputs and outputs are compatible with SSTL_15 interface. Fully differential clock inputs (CK, /CK) operation. Eight Banks Posted CAS by programmable additive latency Bust length: 4 with Burst Chop (BC) and 8. CAS Write Latency (CWL): 5, 6, 7, 8 CAS Latency (CL): 6, 7, 8, 9, 10, 11 Write Latency (WL) =Read Latency (RL) -1. Bi-directional Differential Data Strobe (DQS). Data inputs on DQS centers when write. Data outputs on DQS, /DQS edges when read. On chip DLL align DQ, DQS and /DQS transition with CK transition. DM mask write data-in at the both rising and falling edges of the data strobe. Sequential & Interleaved Burst type available both for 8 & 4 with BC. Multi Purpose Register (MPR) for pre-defined pattern read out On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchro...