Serial Flash. SST25WF020A Datasheet

SST25WF020A Flash. Datasheet pdf. Equivalent

Part SST25WF020A
Description 2 Mbit 1.8V SPI Serial Flash
Feature SST25WF020A 2 Mbit 1.8V SPI Serial Flash Features • Single Voltage Read and Write Operations - 1.6.
Manufacture Microchip
Download SST25WF020A Datasheet

SST25WF020A 2 Mbit 1.8V SPI Serial Flash Features • Single SST25WF020A Datasheet
Recommendation Recommendation Datasheet SST25WF020A Datasheet

2 Mbit 1.8V SPI Serial Flash
• Single Voltage Read and Write Operations
- 1.65-1.95V
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
- 40MHz
• Superior Reliability
- Endurance: 100,000 Cycles
- Greater than 20 years Data Retention
• Ultra-Low Power Consumption:
- Active Read Current: 4 mA (typical)
- Standby Current: 10 μA (typical)
- Power-down Mode Standby Current: 4 μA (typical)
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 64 KByte overlay blocks
• Page Program Mode
- 256 Bytes/Page
• Fast Erase and Page-Program:
- Chip-Erase Time: 300 ms (typical)
- Sector-Erase Time: 40 ms (typical)
- Block-Erase Time: 80 ms (typical)
- Page-Program Time: 3 ms/ 256 bytes (typical)
• End-of-Write Detection
- Software polling the BUSY bit in Status Register
• Hold Pin (HOLD#)
- Suspend a serial sequence without deselect-
ing the device
• Write Protection (WP#)
- Enables/Disables the Lock-Down function of
the status register
• Software Write Protection
- Write protection through Block-Protection bits
in status register
• Temperature Range
- Industrial: -40°C to +85°C
• Packages Available
- 8-lead SOIC (150 mils)
- 8-contact USON (2mm x 3mm)
- 8-contact WDFN(5mm x 6mm)
• All devices are RoHS compliant
Product Description
SST25WF020A is a member of the Serial Flash 25
Series family and feature a four-wire, SPI-compatible
interface that allows for a low pin-count package which
occupies less board space and ultimately lowers total
system costs. SPI serial flash memory is manufactured
with proprietary, high-performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufac-
turability compared with alternate approaches.
This Serial Flash significantly improve performance
and reliability, while lowering power consumption. The
device writes (Program or Erase) with a single power
supply of 1.65-1.95V. The total energy consumed is a
function of the applied voltage, current, and time of
application. Since for any given voltage range, the
SuperFlash technology uses less current to program
and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less
than alternative flash memory technologies.
SST25WF020A is offered in 8-lead SOIC, 8-contact
USON, and 8-contact WDFN packages. See Figure 2-
1 for the pin assignments.
2014 Microchip Technology Inc.
DS20005139E-page 1

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DS20005139E-page 2
2014 Microchip Technology Inc.

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