Flash Memory. SST26WF016B Datasheet

SST26WF016B Memory. Datasheet pdf. Equivalent

Part SST26WF016B
Description 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory
Feature SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltag.
Manufacture Microchip
Datasheet
Download SST26WF016B Datasheet

SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI SST26WF016B Datasheet
SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI SST26WF016BA Datasheet
Recommendation Recommendation Datasheet SST26WF016B Datasheet





SST26WF016B
SST26WF016B/
SST26WF016BA
1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory
Features
• Single Voltage Read and Write Operations
- 1.65-1.95V
• Serial Interface Architecture
- Mode 0 and Mode 3
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- x1/x2/x4 Serial Peripheral Interface (SPI) Proto-
col
• High Speed Clock Frequency
- 104 MHz max
• Burst Modes
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby current: 10 μA (typical)
- Deep Power-Down current: 2.5 μA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter overlay
blocks
- One 32 KByte top and bottom overlay block
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Protection
- Individual-Block Write Protection with permanent
lock-down capability
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
• Security ID
- One-Time Programmable (OTP) 2 KByte,
Secure ID
- 64 bit unique, factory pre-programmed identifier
- User-programmable area
• Temperature Range
- Industrial: -40°C to +85°C
• Packages Available
- 8-contact WDFN (6mm x 5mm)
- 8-lead SOIC (150 mil)
- 8-ball Chip Scale Package (Z-Scale™)
• All devices are RoHS compliant
Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a six-wire, 4-bit I/O interface that
allows for low-power, high-performance operation in a
low pin-count package. SST26WF016B/016BA also
support full command-set compatibility to traditional
Serial Peripheral Interface (SPI) protocol. System
designs using SQI flash devices occupy less board
space and ultimately lower system costs.
All members of the 26 Series, SQI family are manufac-
tured with SST proprietary, high-performance CMOS
SuperFlash® technology. The split-gate cell design
and thick-oxide tunneling injector attain better reliability
and manufacturability compared with alternate
approaches.
The SST26WF016B/SST26WF016BA significantly
improves performance and reliability, while lowering
power consumption. This device writes (Program or
Erase) with a single power supply of 1.65-1.95V. The
total energy consumed is a function of the applied volt-
age, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time,
the total energy consumed during any Erase or Pro-
gram operation is less than alternative flash memory
technologies.
SST26WF016B/016BA is offered in 8-contact WDFN
(6 mm x 5 mm), 8-lead SOIC (150 mil), and 8-ball
XFBGA (Z-Scale™) packages. See Figure 2-1 for pin
assignments.
Two configurations are available upon order:
SST26WF016B default at power-up has the WP# and
Hold# pins enabled and SST26WF016BA default at
power-up has the WP# and Hold# pins disabled.
2014 Microchip Technology Inc.
DS20005013D-page 1



SST26WF016B
SST26WF016B/SST26WF016BA
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DS20005013D-page 2
2014 Microchip Technology Inc.





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