EDD10163BBH-LS

PRELIMINARY DATA SHEET 1G bits DDR Mobile RAM WTR (Wide Temperature Range), Low Power Function EDD10163BBH-LS (64M words × 16 bits) Specifications Density: 1G bits Organization: 16M words × 16 bits × 4 banks Package: 60-ball FBGA  Lead-free (RoHS compliant) and Halogen-free Power supply: VDD, VDDQ = 1.7V to 1.95V Data rate: 400Mbps/333Mbps (max.) 2KB page size  Row address: A0 to A13  Column address: A0 to A9 Four internal banks for concurrent operation Interface: LVCMOS Burst lengths (BL): 2, 4, 8, 16 Burst type (BT):  Sequential (2, 4, 8, 16)  Interleave (2, 4, 8, 16) /CAS Latency (CL): 3 Precharge: auto precharge option for each burst access Driver strength: normal, 1/2, 1/4, 1/8 Refresh: auto-refresh, self-refresh Refresh cycles: 8192 cycles/64ms  Average refresh period: 7.8µs Operating ambient temperature range  TA = −25°C to +85°C Features DLL is not implemented Low power c...