Mobile RAM. EDD12322GBH-TS Datasheet

EDD12322GBH-TS RAM. Datasheet pdf. Equivalent

Part EDD12322GBH-TS
Description 128M bits DDR Mobile RAM
Feature PRELIMINARY DATA SHEET 128M bits DDR Mobile RAM WTR (Wide Temperature Range) EDD12322GBH-TS (4M w.
Manufacture Elpida Memory
Datasheet
Download EDD12322GBH-TS Datasheet

PRELIMINARY DATA SHEET 128M bits DDR Mobile RAM WTR (Wide EDD12322GBH-TS Datasheet
Recommendation Recommendation Datasheet EDD12322GBH-TS Datasheet





EDD12322GBH-TS
PRELIMINARY DATA SHEET
128M bits DDR Mobile RAM
WTR (Wide Temperature Range)
EDD12322GBH-TS (4M words × 32 bits)
Specifications
Density: 128M bits
Organization
 × 32 bits: 1M words × 32 bits × 4 banks
Package: 90-ball FBGA
Lead-free (RoHS compliant) and Halogen-free
Power supply: VDD, VDDQ = 1.7V to 1.95V
Data rate: 333Mbps/266Mbps (max.)
1KB page size
Row address: A0 to A11
Column address: A0 to A7
Four internal banks for concurrent operation
Interface: LVCMOS
Burst lengths (BL): 2, 4, 8, 16
Burst type (BT):
Sequential (2, 4, 8, 16)
Interleave (2, 4, 8, 16)
/CAS Latency (CL): 3
Precharge: auto precharge option for each burst
access
Driver strength: normal, 1/2, 1/4, 1/8
Refresh: auto-refresh, self-refresh
Refresh cycles: 4096 cycles/64ms
Average refresh period: 15.6µs
Operating ambient temperature range
TA = 25°C to +85°C
Features
DLL is not implemented
Low power consumption
Double-data-rate architecture; two data transfers per
one clock cycle
The high-speed data transfer is realized by the 2 bits
prefetch pipelined architecture
Bi-directional data strobe (DQS) is transmitted
/received with data for capturing data at the receiver.
Data inputs, outputs, and DM are synchronized with
DQS
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Burst termination by burst stop command and
Precharge command
Wide temperature range
TA = 25°C to +85°C
Document No. E1530E20 (Ver. 2.0)
Date Published October 2009 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2009



EDD12322GBH-TS
EDD12322GBH-TS
Ordering Information
Part number
EDD12322GBH-6ETS-F
Die
revision
G
EDD12322GBH-7FTS-F
Organization
(words × bits)
4M × 32
Internal
banks
4
Data rate
Mbps (max.)
333
266
/CAS latency
3
3
Package
90-ball FBGA
Part Number
E D D 12 32 2 G BH - 6E TS - F
Elpida Memory
Type
D: Monolithic Device
Product Family
D: DDR Mobile RAM
Density / Bank
12: 128Mb / 4-bank
Organization
32: x32
Power Supply, Interface
2: 1.8V, LVCMOS, w/o Low Power Function
Environment Code
F: Lead Free (RoHS Compliant)
and Halogen Free
Spec Detail
TS: WTR (-25°C to +85°C)
Speed
6E: DDR333 (3-3-3)
7F: DDR266 (3-3-3)
Package
BH: FBGA
Die Rev.
Preliminary Data Sheet E1530E20 (Ver. 2.0)
2





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