EDD12322GBH-TS

PRELIMINARY DATA SHEET 128M bits DDR Mobile RAM WTR (Wide Temperature Range) EDD12322GBH-TS (4M words × 32 bits) Specifications Density: 128M bits Organization  × 32 bits: 1M words × 32 bits × 4 banks Package: 90-ball FBGA  Lead-free (RoHS compliant) and Halogen-free Power supply: VDD, VDDQ = 1.7V to 1.95V Data rate: 333Mbps/266Mbps (max.) 1KB page size  Row address: A0 to A11  Column address: A0 to A7 Four internal banks for concurrent operation Interface: LVCMOS Burst lengths (BL): 2, 4, 8, 16 Burst type (BT):  Sequential (2, 4, 8, 16)  Interleave (2, 4, 8, 16) /CAS Latency (CL): 3 Precharge: auto precharge option for each burst access Driver strength: normal, 1/2, 1/4, 1/8 Refresh: auto-refresh, self-refresh Refresh cycles: 4096 cycles/64ms  Average refresh period: 15.6µs Operating ambient temperature range  TA = −25°C to +85°C Features DLL is not implemented Low power con...