N-Channel MOSFET. P1120EDB Datasheet

P1120EDB MOSFET. Datasheet pdf. Equivalent

Part P1120EDB
Description N-Channel MOSFET
Feature P1120EDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 280mΩ @VGS = 1.
Manufacture UNIKC
Datasheet
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P1120EDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1120EDB Datasheet
Recommendation Recommendation Datasheet P1120EDB Datasheet





P1120EDB
P1120EDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
280mΩ @VGS = 10V
ID
11A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
11
6.7
33
Avalanche Current
IAS 13
Avalanche Energy
L = 1mH EAS 84.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
69
27
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
1.8
UNITS
°C / W
REV 1.0
1 2016/3/21



P1120EDB
P1120EDB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 125 °C
200
1
V
23
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 5.5A
VGS =4.5V, ID = 5.5A
VDS = 10V, ID = 5.5A
233 280
268 340
8.7 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS = 160V, ID = 11A, VGS = 10V
VDS = 100V , ID @11A,
VGS = 10V, RGEN = 6Ω
638
96 pF
14
17
2 nC
5.8
25
91
nS
80
72
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 11A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 11A, dl/dt = 100A / mS
130
520
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
11
1
A
V
nS
uC
REV 1.0
2 2016/3/21





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