N-Channel MOSFET. P1402CDG Datasheet

P1402CDG MOSFET. Datasheet pdf. Equivalent

Part P1402CDG
Description N-Channel MOSFET
Feature P1402CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 14mΩ @VGS = 4.5V.
Manufacture UNIKC
Datasheet
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P1402CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1402CDG Datasheet
Recommendation Recommendation Datasheet P1402CDG Datasheet





P1402CDG
P1402CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 14mΩ @VGS = 4.5V
ID
45A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
45
19
140
Avalanche Current
IAS 33
Avalanche Energy
L = 0.1mH
EAS
52
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 175
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.6
110
UNITS
°C / W
Rev 1.2
1 2015/5/28



P1402CDG
P1402CDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±12V
20
0.45 0.63 1.25
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 16V, VGS = 0V
VDS = 13.2V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 4.5V
140
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 2.5V, ID = 9A
VGS = 4.5V, ID = 18A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
12.5 28
9.3 14
7.9 12
26
DYNAMIC
Input Capacitance
Ciss
1030
Output Capacitance
Coss
VGS = 0V, VDS = 10V, f = 1MHz
364
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 5V,
ID = 18A
VDS = 10V,
ID @ 18A, VGS = 5V, RGS = 3.3Ω
253
34
2
6
7.5
83
18
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
22
1.3
Reverse Recovery Time
trr
37
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
43
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Rev 1.2
2 2015/5/28





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