N-Channel MOSFET. P1525EDB Datasheet

P1525EDB MOSFET. Datasheet pdf. Equivalent

Part P1525EDB
Description N-Channel MOSFET
Feature P1525EDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 260mΩ @VGS = 1.
Manufacture UNIKC
Datasheet
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P1525EDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1525EDB Datasheet
Recommendation Recommendation Datasheet P1525EDB Datasheet





P1525EDB
P1525EDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
260mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
15
9.4
60
7.6
Avalanche Energy
L= 1mH
EAS 29
Power Dissipation
TC= 25 °C
TC= 100°C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
73
29
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.7
62.5
UNITS
°C / W
REV 1.1
1 2016/6/28



P1525EDB
P1525EDB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
250
V
12
3
VDS = 0V, VGS = ±20V
±100 nA
VDS =250V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS =10V, ID =7.5A
VGS =4.5V, ID =7.5A
VDS =10V, ID =7.5A
211 260
227 310
16
S
DYNAMIC
Input Capacitance
Ciss
866
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
126
Reverse Transfer Capacitance
Crss
16
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 200V, ID = 10A,
VGS = 15V
27
3.3
9.3
Turn-On Delay Time2
td(on)
19
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 125V , ID @ 15A,
VGS= 10V, RGEN= 6Ω
43
52
Fall Time2
tf
63
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dlF/dt = 100A / mS
140
0.71
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
15
1
pF
nC
nS
A
V
nS
nC
REV 1.1
2 2016/6/28





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