N-Channel MOSFET. P1820AD Datasheet

P1820AD MOSFET. Datasheet pdf. Equivalent

Part P1820AD
Description N-Channel MOSFET
Feature P1820AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 160mΩ @VGS = 10.
Manufacture UNIKC
Datasheet
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P1820AD
P1820AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
160mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
11
29
Avalanche Current
IAS 18
Avalanche Energy
L = 1.2mH
EAS
194
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
104
41
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.2 °C / W
Ver 1.1
1 2013-3-20



P1820AD
P1820AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
200
234
±100
Zero Gate Voltage Drain Current
Drain-Source On-State
RFoerswisatradncTera1 nsconductance1
IDSS
RDS(ON)
gfs
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 125 °C
VGS = 10V, ID = 9A
VDS = 10V, ID = 9A
1
10
130 160
17
DYNAMIC
Input Capacitance
Ciss
1370
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
147
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 160V, ID = 18A, VGS = 10V
VDS = 100V, ID @ 18A,
VGS = 10V , RG = 25Ω
29
45
7.2
21
30
260
270
210
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 18A, VGS = 0V
18
1.6
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 18A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
183
1.2
2Independent of operating temperature.
UNIT
V
nA
mA
S
pF
nC
nS
A
V
nS
μC
Ver 1.1
2 2013-3-20





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